2SB1551

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1551 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ -20 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1551 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 B -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA B -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -5A; VCE= -3V 1000 20000 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 90 pF fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -5V; ftest= 10MHz 12 MHz isc Website：www.iscsemi.cn 2