2SB1560

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2390 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -160 -150 -5 -10 1 100 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-4V IE=0 ; VCB=10V;f=1MHz IC=-2A ; VCE=-12V 5000 230 50 MIN -150 TYP. 2SB1560 MAX UNIT V -2.5 -3.0 -100 -100 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-7A;RL=10Ω IB1=- IB2=-7mA VCC=-70V 0.8 3.0 1.2 μs μs μs hFE Classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1560 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1560 4