2SB1568

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1568 DESCRIPTION ・With TO-220F package ・Complement to type 2SD2399 ・High DC current gain. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・For power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -7 -4 -6 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1568 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA; IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA -1.0 -3.0 V ICBO Collector cut-off current VCB=-80V;IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-3V 1000 10000 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 35 pF fT Transition frequency IC=-0.5A ; VCE=-5V;f=10MHz 12 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1568 Fig.2 Outline dimensions 3