2SB1588

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1588 DESCRIPTION ・With TO-3PML package ・Complement to type 2SD2439 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -150 -5 -10 -1 80 150 -55~150 UNIT V V V A A W ℃ ℃ 1 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-7 A;IB=-7m A IC=-7 A;IB=-7m A VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-4V IC=-2A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 5000 50 230 MIN -150 2SB1588 TYP. MAX UNIT V -2.5 -3.0 -100 -100 V V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-7A;RL=10Ω IB1=-IB2=-7mA VCC=-70V 0.8 3.0 1.2 μs μs μs hFE classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1588 Fig.2 Outline dimensions 3