2SB1603A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A DESCRIPTION ・With TO-220F package ・Low collector saturation voltage ・High speed switching APPLICATIONS ・For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SB1603 VCBO Collector-base voltage 2SB1603A 2SB1603 VCEO Collector-emitter voltage 2SB1603A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open collector Open base -40 -5 -4 -8 2 W V A A Open emitter -50 -20 V CONDITIONS MAX -40 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB1603 V(BR)CEO Collector-emitter breakdown voltage 2SB1603A VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-2A ;IB=-0.1A IC=-2A ;IB=-0.1A VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A ; VCE=-5V IC=-10mA ;IB=0 CONDITIONS 2SB1603 2SB1603A MIN -20 TYP. MAX UNIT V -40 -0.5 -1.5 -50 -50 45 90 150 260 MHz V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A 0.3 0.4 0.1 μs μs μs hFE-2 Classifications Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1603 2SB1603A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A 4