2SB1605A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION ・With TO-220F package ・Low collector saturation voltage ・Good linearity of hFE APPLICATIONS ・For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SB1605 VCBO Collector-base voltage 2SB1605A 2SB1605 VCEO Collector-emitter voltage 2SB1605A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ℃ ℃ Open collector Open base -80 -5 -3 -5 2 W V A A Open emitter -80 -60 V CONDITIONS MAX -60 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB1605 IC=-30mA ;IB=0 2SB1605A IC=-3A ;IB=-0.375A IC=-3A ; VCE=-4V VCE=-60V; VBE=0 CONDITIONS 2SB1605 2SB1605A MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB1605 2SB1605A 2SB1605 2SB1605A ICES Collector cut-off current -200 VCE=-80V; VBE=0 VCE=-30V; IB=0 -300 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-10V 70 10 30 -1 250 μA ICEO Collector cut-off current μA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1A; IB1=-IB2=-0.1A 0.5 1.2 0.3 μs μs μs hFE-1 Classifications Q 70-150 P 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1605 2SB1605A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A 4