2SB1625

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1625 DESCRIPTION ・With TO-3PML package ・Complement to type 2SD2494 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION ・ Maximum absolute ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -110 -110 -5 -6 -1 60 150 -55~150 UNIT V V V A A W ℃ ℃ 1 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-5m A IC=-5 A;IB=-5m A VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 5000 100 110 MIN -110 2SB1625 TYP. MAX UNIT V -2.5 -3.0 -100 -100 V V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=6Ω IB1=-IB2=-5mA VCC=-30V 1.1 3.2 1.1 μs μs μs hFE classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1625 Fig.2 Outline dimensions 3