2SB1626

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1626 DESCRIPTION ・With TO-220F package ・Complement to type 2SD2495 APPLICATIONS ・For audio,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -110 -110 -5 -6 -1 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-5A; IB=-5mA IC=-5A; IB=-5mA VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V f=1MHz;VCB=-10V 5000 100 110 MIN -110 2SB1626 TYP. MAX UNIT V -2.5 -3.0 -0.1 -0.1 V V mA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A IB1=-IB2=-5mA VCC=30V ,RL=6Ω 1.1 3.2 1.1 μs μs μs hFE Classifications O 5000-12000 p 6500-20000 Y 15000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1626 Fig.2 Outline dimensions 3