2SB1658

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -6 -5 -10 -2 0.1 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VCEsat-3 VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-1A; IB=-50mA IC=-2A; IB=-100mA IC=-4A; IB=-200mA IC=-1A; IB=-100mA VCB=-30V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-2V IC=-4A ; VCE=-2V IC=-50mA ; VCE=-10V IE=0;f=1MHz ; VCB=-10V 150 50 95 100 MIN -30 2SB1658 TYP. MAX UNIT V -0.15 -0.25 -0.5 -1.5 -0.1 -0.1 600 V V V V μA μA MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1658 Fig.2 Outline dimensions 3