2SB337

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB337 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.29V(Typ.) @IC= -4A ·High Power Dissipation: PC= 30W(Max)@TC=55℃ APPLICATIONS ·Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VEBO IC IE IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=55℃ Junction Temperature Storage Temperature VALUE -40 -30 -10 -7 7 -1 30 150 -55~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB337 MAX UNIT V(BR)CER Collector-Emitter Breakdown Voltage IC= -0.6A; RBE= 68Ω -30 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B 0.29 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V 0.38 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -1.0 mA hFE DC Current Gain IC= -1A; VCE= -2V 50 165 hFE Classifications A 50-100 B 80-165 isc Website：www.iscsemi.cn