2SB506

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB B Base Current-Continuous Collector Power Dissipation @ Ta=25℃ -1 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1018A TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -0.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.4 V μA μA Collector Cutoff Current VCB= -100V; IE= 0 -5 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 hFE-1 DC Current Gain IC= -1A; VCE= -1V 70 240 hFE-2 DC Current Gain IC= -4A; VCE= -1V 30 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 250 pF fT Current-Gain—Bandwidth Product IC= -1A; VCE= -4V 10 MHz Switching Times μs μs μs ton Turn-on Time IC= -3.0A ,IB1= -IB2= -0.3A, VCC= -30V; RL= 10Ω 0.4 tstg Storage Time 2.5 tf Fall Time 0.5 hFE-1 Classifications O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2