2SB531

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB531 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High Power Dissipation: PC= 50W(Max)@TC=25℃ ·Complement to Type 2SD371 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IE Emitter Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 6 A PC 50 W ℃ TJ 150 Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -0.1A; IB= 0 B 2SB531 MIN -100 -5 TYP. MAX UNIT V V IE= -10mA; IC= 0 IC= -4A; IB= -0.4A B -2.0 -1.5 -0.1 -0.1 40 20 180 8 240 V V mA mA IC= -4A; VCE= -5V VCB= -60V; IE= 0 VEB= -5V; IC= 0 IC= -1A; VCE= -5V IC= -4A; VCE= -5V IE= 0; VCB= -10V; f= 1MHz IC= -1A; VCE= -5V pF MHz hFE Classifications R 40-80 O 70-140 Y 120-240 isc Website：www.iscsemi.cn