2SB536

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION ・With TO-220C package ・Complement to type 2SD381 ・Low collector saturation voltage APPLICATIONS ・Audio frequency power amplifier ・Low speed power switching PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -50~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -130 -120 -5 -1.5 -3.0 -0.3 1.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB536 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-5mA ; VCE=-5V 25 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 40 250 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 35 pF fT Transition frequency IC=-0.1A ; VCE=-5V 40 MHz hFE-2 Classifications N 40-80 M 60-120 L 80-160 K 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB536 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3