2SB539

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB539 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High Power Dissipation: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD287 APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Recommended for 70~80W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE -130 -120 -6 -10 -15 100 150 -65~150 UNIT V V V A A W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB539 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -2.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -2.0 V Collector Cutoff Current VCB= -120V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -2A; VCE= -5V 40 200 hFE-2 DC Current Gain IC= -5A; VCE= -5V 25 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 420 pF fT Current-Gain—Bandwidth Product IC= -0.2A; VCE= -10V 7 MHz hFE-1 Classifications S 40-80 R 60-120 Q 100-200 isc Website：www.iscsemi.cn