2SB541

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB541 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High Power Dissipation: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD388 APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Suitable for output stage of 40~50 watts audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO IC Emitter-Base Voltage -6 V Collector Current-Continuous -8 A ICM Collector Current-Pulse Collector Power Dissipation @TC=25℃ Junction Temperature -12 A PC 80 W ℃ ℃ TJ 150 Tstg Storage Temperature -65~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB541 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1A B -2.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -5A; IB= -1A B -2.0 V Collector Cutoff Current VCB= -100V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 40 200 hFE-2 DC Current Gain IC= -4A; VCE= -5V 20 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 320 pF fT Current-Gain—Bandwidth Product IC= -0.2A; VCE= -10V 7 MHz hFE-1 Classifications S 40-80 R 60-120 Q 100-200 isc Website：www.iscsemi.cn