2SB546

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB546 DESCRIPTION ・With TO-220C package ・Complement to type 2SD401 ・Collector current IC=-2A ・Collector-base voltage VCBO=-200V APPLICATIONS ・For use in general purpose power amplifier,vertical output application PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -5 -2 25 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-0.5mA; IE=0 IE=-0.5mA; IB=0 IC=-500m A;IB=-50m A VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-0.4A ; VCE=-10V IC=-0.4A ; VCE=-10V 40 5 MIN -150 -200 -5 TYP. 2SB546 MAX UNIT V V V -1.0 -50 -50 240 V μA μA MHz hFE classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB546 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB546 4