2SB551

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB551 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Typ.)@IC= -2A ·High Power Dissipation: PC= 25W(Max)@TC=55℃ APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous Collector Power Dissipation @TC= 25℃ Junction Temperature -3 A PC 25 W TJ 150 ℃ Tstg Storage Temperature -45~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB551 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B 1.2 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V 1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -4V 35 200 hFE-2 DC Current Gain IC= -0.1A; VCE= -4V 35 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 15 MHz hFE-1 Classifications A 35-70 B 60-120 C 100-200 isc Website：www.iscsemi.cn