2SB553

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION ・With TO-220C package ・Complement to type 2SD553 ・Low collector saturation voltage APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -50~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -70 -50 -5 -7 1.5 W UNIT V V V A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-4A; IB=-0.4A IC=-4A; IB=-0.4A VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IE=0 ; VCB=-10V; f=1MHz IC=-1A ; VCE=-4V 70 30 250 10 MIN -50 -0.2 -0.9 TYP. 2SB553 MAX UNIT V -0.4 -1.2 -30 -50 240 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.3A; VCC≈-30V RL=10Ω 0.2 2.5 0.5 μs μs μs hFE-1Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB553 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB553 4