2SB554

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION ・With TO-3 package ・Complement to type 2SD424 ・High power dissipation APPLICATIONS ・For use in power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -15 -4 150 150 -55~200 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB554 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V VBE Base-emitter on voltage IC=-2A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-90V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-2A ; VCE=-5V 40 140 COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 450 pF fT Transition frequency IC=-2A ; VCE=-5V 6 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB554 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3