2SB555

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION ・With TO-3 package ・Complement to type 2SD425/426 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SB555 VCBO Collector-base voltage 2SB556 2SB555 VCEO Collector-emitter voltage 2SB556 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -120 -5 -12 12 100 150 -65~150 V A A W ℃ ℃ Open emitter -120 -140 V CONDITIONS VALUE -140 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB555 2SB556 MIN TYP. MAX UNIT 2SB555 V(BR)CEO Collector-emitter breakdown voltage 2SB556 IC=-0.1A ;IB=0 -140 V -120 V(BR)EBO Emitter-base breakdown voltage IE=-10mA ;IC=0 -5 V 2SB555 VCEsat Collector-emitter saturation voltage 2SB556 IC=-7A; IB=-0.7A -3.0 IC=-6A; IB=-0.6A V VBE Base-emitter on voltage IC=-7A ; VCE=-5V -2.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-2A ; VCE=-5V 40 140 COB Output capacitance IE=0 ; VCB=-10V; f=1.0MHz 330 pF fT Transition frequency IC=-2A ; VCE=-5V 6 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB555 2SB556 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3