2SB558

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB558 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High Power Dissipation: PC= 60W(Max)@TC=25℃ ·Complement to Type 2SD428 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 40W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE -100 -100 -5 -7 7 60 150 -65~150 UNIT V V V A A W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -0.1A; IB= 0 B 2SB558 MIN -100 -5 TYP. MAX UNIT V V IE= -10mA; IC= 0 IC= -5A; IB= -0.5A B -2.5 -2.0 -0.1 -0.1 40 15 220 7 140 V V mA mA IC= -5A; VCE= -5V VCB= -50V; IE= 0 VEB= -5V; IC= 0 IC= -1A; VCE= -5V IC= -5A; VCE= -5V IE= 0; VCB= -10V; f= 1MHz IC= -1A; VCE= -5V pF MHz hFE-1 Classifications R 40-80 O 70-140 isc Website：www.iscsemi.cn