2SB566A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION ・With TO-220C package ・Complement to type 2SD476/476A APPLICATIONS ・For low frequency power amplifier power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SB566 VCEO Collector-emitter voltage 2SB566A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -60 -5 -4 -8 40 150 -55~150 V A A W ℃ ℃ CONDITIONS Open emitter VALUE -70 -50 V UNIT V Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO PARAMETER Collector-base breakdown voltage 2SB566 IC=-50mA; RBE=∞ 2SB566A IE=-10μA; IC=0 IC=-2 A;IB=-0.2 A IC=-2 A;IB=-0.2 A VCB=-50V; IE=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-4V CONDITIONS IC=-10μA ; IE=0 2SB566 2SB566A MIN -70 -50 TYP. MAX UNIT V V(BR)CEO Collector-emitter breakdown voltage V -60 -5 -1.0 -1.2 -1 35 60 15 200 MHz V V V μA V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency Switching times ton toff tstg Turn-on time Turn-off time Storage time IC=-0.5A ; VCC=-10.5V IB1=-IB2=-0.05 A 0.3 3.0 2.5 μs μs μs hFE-2 classifications B 60-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB566 2SB566A Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A 4