2SB609

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB609 DESCRIPTION ·With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -5 -4 40 150 -40~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB609 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-4V -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE DC current gain IC=-0.5A ; VCE=-4V 60 320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB609 Fig.2 outline dimensions 3