2SB634

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB634 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High Power Dissipation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature -10 A PC 60 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB634 MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 IC= -50mA; RBE= ∞ -120 V V(BR)CEO Collector-Emitter Breakdown Voltage -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) ICBO Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 40 320 hFE-2 DC Current Gain IC= -3A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 15 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn 2