Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB645
DESCRIPTION ・With TO-3 package ・High power dissipation APPLICATIONS ・For power switching and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -5 -15 -5 150 150 -65~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB645
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-200
V
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=-1mA ;IC=0 IC=-10A; IB=-1A
-5
V
Collector-emitter saturation voltage
-3.0
V
ICBO
Collector cut-off current
VCB=-200V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-5V
40
140
fT
Transition frequency
IC=-0.5A ; VCE=-10V
12
MHz
hFE Classifications R 40-80 O 70-140
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB645
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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