2SB653

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB653 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High Power Dissipation: PC= 60W(Max)@TC=25℃ ·Complement to Type 2SD673 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE -120 -100 -5 -7 -12 -2 60 150 -55~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO hFE-1 hFE-2 fT tf PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Fall Time CONDITIONS IC= -50mA; RBE= ∞ IE= -5mA; IC= 0 IC= -5A; IB= -0.5A B 2SB653 MIN -100 -5 TYP. MAX UNIT V V -3.0 -1.5 -1 60 20 22 0.5 200 V V mA IC= -1A; VCE= -5V VCB= -100V; IE= 0 IC= -1A; VCE= -5V IC= -5A; VCE= -5V IC= -1A; VCE= -5V IC= -0.6A; IB1= -0.6A; IB2= 0 MHz μs hFE Classifications B 60-120 C 100-200 isc Website：www.iscsemi.cn