2SB656

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB656 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·High Power Dissipation: PC= 125W(Max)@TC=25℃ ·Complement to Type 2SD676 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE -160 -160 -5 -12 -20 125 150 -55~150 UNIT V V V A A W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB656 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ -160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -2.5 V VBE(on) ICBO Base-Emitter On Voltage IC= -1A; VCE= -5V -1.5 V Collector Cutoff Current VCB= -120V; IE= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-2 DC Current Gain IC= -6A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 22 MHz hFE Classifications B 60-120 C 100-200 isc Website：www.iscsemi.cn