Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB668
DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For use in power amplifier and switching applications
PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -3 -5 25 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SB668
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA, IB=0
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA, IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-2mA, IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ,IB=-8mA
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-2A ,IB=-8mA
-2.5
V
ICBO
Collector cut-off current
VCB=-120V, IE=0
-100
μA
ICEO
Collector cut-off current
VCE=-100V, IB=0
-500
μA
IEBO
Emitter cut-off current
VEB=-5V, IC=0
-2
mA
hFE
DC current gain
IC=-1A ; VCE=-3V
2000
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB668
Fig.2 Outline dimensions
3
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