2SB673

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB673 DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD633 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC IB B Collector Current-Continuous -7 A Base Current-DC Collector Power Dissipation TC=25℃ Junction Temperature -0.2 A PC 40 W ℃ ℃ Tj 150 Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB673 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A ,IB= -14mA -2.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -3A ,IB= -6mA -2.5 V μA Collector Cutoff Current VCB= -100V, IE= 0 -100 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -4 mA hFE-1 DC Current Gain IC= -3A ; VCE= -3V 2000 15000 hFE-2 DC Current Gain IC= -7A ; VCE= -3V 1000 Switching times μs μs μs ton Turn-on Time RL= 15Ω, VCC= -45V IB1= -IB2= -6mA 0.8 tstg Storage Time 2.0 tf Fall Time 2.5 isc Website：www.iscsemi.cn