2SB674

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB674 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD634 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -7 -0.2 40 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA, IB=0 IC=-3A ,IB=-6mA B 2SB674 MIN -80 TYP. MAX UNIT V -0.95 -1.3 -1.55 -1.5 -2.0 -2.5 -0.1 -4.0 V V V mA mA IC=-7A ,IB=-14mA B IC=-3A ,IB=-6mA B VCB=-80V, IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IC=-7A ; VCE=-3V 2000 1000 15000 Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=-6mA VCC=-45V,RL=15Ω 0.8 2.0 2.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB674 Fig.2 Outline dimensions 3