2SB679

INCHANGE Semiconductor isc Product Specification 2SB679 isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation: PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IE Emitter Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 12 A PC 100 W Tj 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SB679 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA ;IB= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA ;IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V -2.5 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -2A ; VCE= -5V 40 140 hFE-2 DC Current Gain IC= -7A ; VCE= -5V 15 COB Output Capacitance VCB= -10V; ftest= 1MHz 900 pF fT Current-Gain—Bandwidth Product IC= -2A ; VCE= -5V 6 MHz hFE-1 Classifications R 40-80 Y 70-140 isc Website：www.iscsemi.cn