2SB689

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB689 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ -5 A 1.8 W PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 40 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB689 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -1.0 V ICEO Collector Cutoff Current VCE= -80V; RBE= ∞ -100 μA IEBO Emitter Cutoff Current VEB= -3.5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.5A; VCE= -4V 50 250 hFE-2 DC Current Gain IC= -50mA; VCE= -4V 25 350 isc Website：www.iscsemi.cn 2