2SB697

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION ・With TO-3 package ・Complement to type 2SD733/733K ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SB697 VCBO Collector-base voltage 2SB697K 2SB697 VCEO Collector-emitter voltage 2SB697K VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -160 -6 -12 -20 100 150 -40~150 V A A W ℃ ℃ Open emitter -180 -140 V CONDITIONS VALUE -160 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB697 2SB697K MIN TYP. MAX UNIT 2SB697 V(BR)CEO Collector-emitter breakdown voltage 2SB697K IC=-50mA ;IB=0 -140 V -160 2SB697 V(BR)CBO Collector-emitter breakdown voltage 2SB697K IC=-5mA ;IE=0 -160 V -180 V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -1.0 -2.5 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 320 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V 15 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB697 2SB697K Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3