2SB703

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB703 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·DC Current Gain: hFE= 40~200 @IC= -0.5A ·Complement to Type 2SD743 APPLICATIONS ·Designed for use in audio frequency power amplifier, low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -80 -80 -5 -4 -6 -1 40 150 -55~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 3.125 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB703 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -2.0 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V 30 hFE-2 DC Current Gain IC= -0.5A; VCE= -5V 40 200 fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V; ftest= 1.0MHz 10 MHz hFE-2 Classifications S 40-80 R 60-120 Q 100-200 isc Website：www.iscsemi.cn 2