2SB705A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・Complement to type 2SD745/745A/745B APPLICATIONS ・Audio frequency power amplifier ・Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB705/705A/705B ・ Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SB705 VCBO Collector-base voltage 2SB705A 2SB705B 2SB705 VCEO Collector-emitter voltage 2SB705A 2SB705B VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -140 -150 -160 -140 -150 -160 -5 -10 -15 120 150 -55~150 V A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB705 V(BR)CEO Collector-emitter breakdown voltage 2SB705A 2SB705B VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance IC=-5A;IB=-0.5 A IC=-5A;IB=-0.5 A VCB=-140V; IE=0 VEB=-3V; IC=0 IC=-50mA ; VCE=-5V IC=-2A ; VCE=-5V IC=-0.2A ; VCE=-5V IE=0; VCB=-10V;f=1MHz IC=-25mA; IB=0 CONDITIONS 2SB705/705A/705B MIN -140 -150 -160 TYP. MAX UNIT V -1.5 -2.0 -50 -50 20 40 17 430 200 V V μA μA MHz pF hFE-2 classifications S 40-80 R 60-120 Q 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB705/705A/705B Fig.2 Outline dimensions 3