2SB707

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION ・With TO-220C package ・Complement to type 2SD568/569 APPLICATIONS ・For low frequency power amplifier low speed switching industrial use PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SB707 VCEO Collector-emitter voltage 2SB708 VEBO IC ICM IB Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ Open collector Open base -80 -7 -7 -15 -3.5 1.5 W V A A A CONDITIONS Open emitter VALUE -80 -60 V UNIT V Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB707 2SB708 MIN TYP. MAX UNIT 2SB707 V(BR)CEO Collector-emitter breakdown voltage 2SB708 IC=-10mA; IB=0 -60 V -80 VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A;IB=-0.5 A -1.5 V μA μA ICBO Collector cut-off current VCB=-60V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 hFE-1 DC current gain IC=-3A ; VCE=-1V 40 200 hFE-2 DC current gain IC=-5A ; VCE=-1V 20 hFE-2 classifications R 40-80 O 60-120 Y 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB707 2SB708 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3