2SB713

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB713 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SD751 APPLICATIONS ·Designed for high power audio frequency amplifier use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature -15 A PC 100 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB713 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.7A B -2.0 V VBE(on) ICBO Base -Emitter On Voltage IC= -7A; VCE= -5V -1.8 V μA μA Collector Cutoff Current VCB= -140V; IE=0 -50 IEBO Emitter Cutoff Current VEB= -3V; IC=0 -50 hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V 40 200 hFE-3 DC Current Gain IC= -5A; VCE= -5V 15 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 20 MHz hFE-2 Classifications R 40-80 Q 60-120 P 100-200 isc Website：www.iscsemi.cn 2