2SB720

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB720 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD760 APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A PC Total Power Dissipation@ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB720 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 B -200 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V μA μA Collector Cutoff Current VCB= -200V; IE= 0 -10 IEBO Emitter Cutoff Current VEB= -3.0V; IC=0 -10 hFE DC Current Gain IC= -150mA; VCE= -5V 35 200 fT Current-Gain—Bandwidth Product IC= -100mA; VCE= -10V 100 MHz hFE Classifications A 35-70 B 60-120 C 100-200 isc Website：www.iscsemi.cn 2