2SB731

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB731 DESCRIPTION ·With TO-126 package ·Complement to type 2SD809 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -1 -2 -0.5 1.0 UNIT V V V A A A PT Total power dissipation TC=25℃ 10 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1.0A; IB=-50mA IC=-1.0A; IB=-50mA VCB=-50V; IE=0 VEB=-6V; IC=0 IC=-0.1A ; VCE=-2V IC=-1A ; VCE=-1V IC=-10mA ; VCE=-2V IE=0; f=1MHz ; VCB=-10V 135 40 75 25 MIN TYP. -0.5 -1.0 2SB731 MAX -0.6 -1.2 -0.1 -0.1 600 UNIT V V μA μA MHz pF hFE-1 Classifications L 135-270 K 200-400 F 300-480 E 360-600 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB731 Fig.2 Outline dimensions 3