2SB753

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB753 DESCRIPTION ・With TO-220C package ・Complement to type 2SD843 ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -50~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -5 -7 1.5 W UNIT V V V A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-4A; IB=-0.4A IC=-4A; IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IE=0 ; VCB=-10V; f=1MHz IC=-1A ; VCE=-4V 70 30 250 10 MIN -80 -0.3 -0.9 TYP. 2SB753 MAX UNIT V -0.5 -1.4 -5 -5 240 V V μA μA pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IB1=- IB2=-0.3A ; VCC=-30V RL=10Ω 0.4 2.5 0.5 μs μs μs hFE-1Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB753 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB753 4