2SB754

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB754 DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SD844 ・High collector current :IC=-7A ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -50 -5 -7 7 2.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IE=-10mA; IC=0 IC=-4.0A; IB=-0.4A IC=-4A ; VCE=-1V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IC=-1A ; VCE=-5V IE=0;f=1MHz ; VCB=-10V 70 30 10 300 MIN -50 -5 -0.2 -0.9 TYP. 2SB754 MAX UNIT V V -0.4 -1.2 -10 -10 240 V V μA μA MHz pF hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB754 Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon Power Transistors 2SB754 4