2SB760

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB760 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD855 APPLICATIONS ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature -2 A PC 30 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB760 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.3 V ICEO Collector Cutoff Current VCE= -60V; IB= 0 B -300 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA hFE-1 DC Current Gain IC= -0.2A; VCE= -4V 40 250 hFE-2 DC Current Gain IC= -1A; VCE= -4V 15 hFE-1 Classifications R 40-90 Q 70-150 P 120-250 isc Website：www.iscsemi.cn 2