INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB775
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -85V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD895
APPLICATIONS ·Designed for 35W audio frequency output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-85
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
ICP
Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature
-10
A
PC
60
W
TJ
150
℃
Tstg
Storage Temperature Range
-40~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -50mA ; RBE=∞ IC= -5mA; IE= 0 IE= -5mA; IC= 0 IC= -4A; IB= -0.4A
B
2SB775
MIN -85 -100 -6
TYP.
MAX
UNIT V V V
-2.0 -1.5 -100 -100 60 20 160 18 200
V V μA μA
IC= -1A; VCE= -5V VCB= -40V; IE=0 VEB= -4V; IC=0 IC= -1A; VCE= -5V IC= -3A; VCE= -5V VCB= -10V; ftest= 1.0MHz IC=-1A; VCE= -5V
pF MHz
Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -1A ,RL= 20Ω, IB1= -IB2= -0.1A,VCC=-20V 0.12 1.29 0.36 μs μs μs
hFE-1 Classifications D 60-120 E 100-200
isc Website:www.iscsemi.cn
2
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