2SB776

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB776 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD896 ・Wide area of safe operation APPLICATIONS ・100V/7A, AF 40W output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -100 -6 -7 -11 70 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;RBE=∞ IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-4A ;IB=-0.4A IC=-1A;VCE=-5V VCB=-80V IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=10V 60 20 15 200 MIN -100 -120 -6 -0.9 TYP. 2SB776 MAX UNIT V V V -2.0 -1.5 -0.1 -0.1 200 V V mA mA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.0A; IB1=-IB2=-0.1A RL=20Ω;VCC=20V 0.2 1.2 0.3 μs μs μs hFE-1 Classifications D 60-120 E 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB776 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB776 4