2SB794

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SD985 2SD986 APPLICATIONS ・For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB794 2SB795 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB794 VCBO Collector-base voltage 2SB795 2SB794 VCEO Collector-emitter voltage 2SB795 VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ Open collector Open base -80 -8 -1.5 -3.0 1.0 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB794 V(BR)CEO Collector-emitter breakdown voltage 2SB795 VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB794 ICBO Collector cut-off current 2SB795 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-1A ; VCE=-2V 1000 2000 IC=-1A ;IB=-1mA IC=-1A ;IB=-1mA VCB=-60V; IE=0 IC=-10mA ;IB=0 -80 CONDITIONS MIN -60 2SB794 2SB795 TYP. MAX UNIT V -1.5 -2.0 V V -1.0 μA -2.0 mA 30000 Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.0A ; IB1=-IB2=-1.0mA VCC=-50V;RL=50Ω 0.5 1.0 1.0 μs μs μs hFE-2 Classifications M 2000-5000 L 4000-10000 K 8000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB794 2SB795 Fig.2 Outline dimensions 3