2SB812

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB812 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 APPLICATIONS ·Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature -8 A PC 60 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICEO ICES hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -30mA; IB= 0 IC= -4A; IB= -0.4A B 2SB812 MIN -60 TYP. MAX UNIT V -1.5 -2.0 -700 -400 40 15 250 V V μA μA IC= -3A; VCE= -4V VCE= -30V; IB= 0 B VCE= -60V; VBE= 0 IC= -1A; VCE= -4V IC= -3A; VCE= -4V Switching times ton toff Turn-on Time IC= -4A, IB1= -IB2= -0.4A Turn-Off Time 1.4 μs 0.2 μs hFE-1 Classifications R 40-90 Q 70-150 P 120-250 isc Website：www.iscsemi.cn 2