2SB824

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION ・With TO-220 package ・Low collector-emitter saturation voltage ・Complement to type 2SD1060 APPLICATIONS ・Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -5 -9 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A VCB=-40V;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V 70 30 160 30 MIN -50 -60 -6 TYP. 2SB824 MAX UNIT V V V -0.4 -0.1 -0.1 280 V mA mA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A; IB1=- IB2=-0.2A 0.1 0.7 0.2 μs μs μs hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB824 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 4