2SB834

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -3 -0.5 1.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR) CEO VBE VCEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Base-emitter on voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA ; IB=0 IC=-0.5A ; VCE=-5V IC=-3A;IB=-0.3A VCB=-60V;IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IE=0; VCB=-10V; f=1MHz IC=-0.5A ; VCE=-5V 60 20 MIN -60 2SB834 TYP. MAX UNIT V -0.7 -0.5 -1.0 -1.0 -0.1 -0.1 200 V V mA mA 150 9 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time VCC=-30V; RL=15Ω IB1=-IB2=-0.2A 0.4 1.7 0.5 μs μs μs hFE-1 classifications O 60-120 Y 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB834 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB834 4