INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB856
DESCRIPTION ·Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous Total Power Dissipation @ TC=25℃
-3
A
PC
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-45~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= -50mA ; RBE= ∞ MIN TYP.
2SB856
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-50
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -5mA ; IE= 0
-50
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-4
V
VCE(sat) VBE(on) ICBO
Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
B
-1.2
V
Base-Emitter On Voltage
IC= -1A; VCE= -4V
-1.5
V μA
Collector Cutoff Current
VCB= -20V; IE= 0
-100
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
35
200
hFE-2
DC Current Gain
IC= -0.1A; VCE= -4V
35
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -4V
35
MHz
hFE-1 Classifications A 35-70 B 60-120 C 100-200
isc Website:www.iscsemi.cn
2
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