Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB859
DESCRIPTION ・With TO-220C package ・Complement to type 2SD1135 APPLICATIONS ・Low frequency power amplifier
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
・
Absolute maximum ratings(Tc=25℃)
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -4 -8 40 150 -45~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB859
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA; RBE=∞ IE=-10μA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-5V VCB=-80V; IE=0 IC=-1A ; VCE=-5V IC=-0.1A ; VCE=-5V IC=0; VCB=-20V;f=1MHz IC=-0.5A ; VCE=-5V 60 35 75 20 pF MHz MIN -80 -5 -2.0 -1.5 -0.1 200 TYP. MAX UNIT V V V V mA
hFE-1 classifications B 60-120 C 100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB859
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB859
4
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